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d a t a sh eet product speci?cation file under integrated circuits, ic03a march 1994 integrated circuits TEA1064B low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting
march 1994 2 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B features low dc line voltage; operates down to 1.8 v (excluding polarity guard) voltage regulator with low voltage drop and adjustable static resistance dc line voltage adjustment facility provides a supply for external circuits dynamic limiting (speech-controlled) in transmit direction prevents distortion of line signal and sidetone symmetrical high-impedance inputs (64 k w ) for dynamic, magnetic or piezo-electric microphones asymmetrical high-impedance input (32 k w ) for electret microphones dtmf signal input confidence tone in the earpiece during dtmf dialling mute input for disabling speech during pulse or dtmf dialling power-down input for improved performance during pulse dial or register recall (flash) receiving amplifier for dynamic, magnetic or piezo-electric earpieces large amplification setting ranges on microphone and earpiece amplifiers line loss compensation (line current dependent) for microphone and earpiece amplifiers (not used for dtmf amplifier) gain control curve adaptable to exchange supply automatic disabling of the dtmf amplifier in extremely-low voltage conditions microphone mute function available with switch mute, power-down and dtmf input reference (pin v ee2 ) can be connected either to v ee1 or slpe. general description the TEA1064B is a bipolar integrated circuit that performs all the speech and line interface functions required in fully electronic telephone sets. it performs electronic switching between dialling and speech. the ic operates at line voltages down to 1.8 v dc (with reduced performance) to facilitate the use of more telephone sets connected in parallel. the transmit signal on the line is dynamically limited (speech-controlled) to prevent distortion at high transmit levels of both the sending signal and the sidetone. ordering information notes 1. sot146-1; 1998 jun 18. 2. sot163-1; 1998 jun 18. extended type number package pins pin position material code TEA1064B 20 dil plastic sot146 (1) TEA1064Bt 20 mini-pack plastic so20; sot163a (2)
march 1994 3 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B quick reference data note 1. for the TEA1064Bt the maximum line current depends on the heat dissipating qualities of the mounted device. symbol parameter conditions min. typ. max. unit i line line current operating range normal operation note 1 11 - 140 ma with reduced performance 2 - 11 ma i cc internal supply current v cc = 2.8 v power-down input low - 1.3 1.6 ma power-down input high - 60 82 m a g v voltage gain range microphone ampli?er 44 - 52 db receiving ampli?er 20 - 45 db line loss compensation ranges g v gain control 5.7 6.1 6.5 db v exch exchange supply voltage 36 - 60 v r exch exchange feeding bridge resistance 400 - 1000 w v ln(p-p) maximum output voltage swing on ln (peak-to-peak value) r16 = 392 w ; i line = 15 ma i p = 1.4 ma 3.55 3.80 4.05 v i p = 2.7 ma 3.25 3.50 3.75 v v p supply for peripherals i line = 15 ma i p = 1.4 ma 2.5 2.7 - v i p = 2.7 ma; r reg-slpe = 20 k w 2.9 3.1 - v v ln dc line voltage i line = 15 ma without r reg-slpe 3.25 3.5 3.75 v r reg-slpe = 20 k w 4.05 4.4 4.75 v t amb operating ambient temperature range - 25 -+ 75 c
march 1994 4 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B fig.1 block diagram. handbook, full pagewidth + mba442 current reference start circuit dynamic limiter low voltage circuit agc circuit supply and reference 17 19 11 v ee1 v ee2 reg agc stab dls/mmute slpe gas2 gas1 qr - qr + gar ln v cc 15 14 12 db 8 9 + - + - 18 10 7 20 13 ir mic + mic - dtmf mute pd + - + - - 1 16 TEA1064B 6 5 4 2 3
march 1994 5 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B pinning symbol pin description ln 1 positive line terminal gas1 2 gain adjustment; transmitting ampli?er gas2 3 gain adjustment; transmitting ampli?er qr - 4 inverting output; receiving ampli?er qr + 5 non-inverting output; receiving ampli?er gar 6 gain adjustment; receiving ampli?er dls/ mmute 7 decoupling for transmit ampli?er dynamic and microphone mute input mic - 8 inverting microphone input mic + 9 non-inverting microphone input stab 10 current stabilizer v ee1 11 negative line terminal dtmf 12 dual-tone multi-frequency input ir 13 receiving ampli?er input mute 14 mute input pd 15 power-down input v cc 16 internal supply decoupling reg 17 voltage regulator decoupling agc 18 automatic gain control input v ee2 19 reference for power-down (pd), mute and dtmf slpe 20 slope adjustment for dc curve/reference for peripheral circuits fig.2 pin configuration. handbook, halfpage 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 mba433 TEA1064B ln gas1 gas2 qr - qr + gar dls/mmute mic - mic + stab slpe agc reg pd mute ir dtmf v ee1 v ee2 v cc
march 1994 6 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B functional description supplies v cc , v ee2 , ln, slpe, reg and stab (figs 3 and 5 ) power for the TEA1064B and its peripheral circuits is usually obtained from the telephone line. the ic develops its own supply voltage at v cc and regulates its voltage drop. the internal supply requires a decoupling capacitor between v cc and v ee1 . the internal current stabilizer is set by a 3.6 k w resistor between stab and v ee1 . the dc current flowing into the set is determined by the exchange supply voltage v exch , the feeding bridge resistance r exch , the subscriber line dc resistance r line and the dc voltage (including polarity guard) on the subscriber set (see fig.3). the internal voltage regulator generates a temperature-compensated reference voltage that is available between ln and slpe (v ref = v ln-slpe = 3.23 v typ.). this internal voltage regulator requires decoupling by a capacitor between reg and v ee1 (c3). the configuration shown in fig.3, gives a stabilized voltage across pins ln and slpe which, applied via the low-pass filter r16, c15, provides a supply to the peripherals that is independant of the line current and depends only on the peripheral supply current. the value of r16 and the level of the dc voltage v ln-slpe determine the supply capabilities. in the basic application r16 = 392 w and c15 = 220 m f. the worst-case peripheral supply current as a function of supply voltage is shown in fig.4. to increase the supply capabilities, the value of r16 can be decreased or the dc voltage v ln-slpe can be increased by using r va(reg-slpe) . note the TEA1064B application is the same as is used for tea1060/tea1061, tea1067 and tea1068 integrated circuits. fig.3 supply arrangement with reference to slpe. the voltage v ln-slpe is fixed to v ref = 3.323 0.25 v. resistor r16 together with the line current determine the supply capabilities and the maximum output swing on the line (no loop damping is necessary). the line voltage v ln =v ref + ({i line - 1.55 ma} r9). handbook, full pagewidth mba435 r exch r line i line v exch dc ac 17 reg c3 r5 r9 10 stab 20 slpe ln 1 v cc 16 11 v ee1 19 v ee2 0.25 ma r1 i slpe + 0.25 ma i cc r16 c1 c15 peripheral circuits v p i p TEA1064B i p + 0.25 ma
march 1994 7 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B fig.4 maximum supply current with respect to fig.3 for peripherals (i p ) as a function of the peripheral supply voltage (v p ). i line = 15 ma; r16 = 392 w ; valid for mute = 0 and 1. line current has very little influence. handbook, halfpage 23 45 5 0 mba436 4 3 2 1 v p (v) i p (ma) r va(reg-slpe) = 20 k w without r va(reg-slpe) fig.5 supply arrangement with reference to v ee1 . handbook, full pagewidth mba432 slpe stab reg v ee1 i p ln 116 20 11 v ee2 17 10 19 TEA1064B ac dc peripheral circuits c1 0.25 ma i slpe + 0.25 ma r line r exch v exch i line r1 v cc i cc c3 r5 r9
march 1994 8 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B the maximum ac output swing on the line at low currents is influenced by r16 (limited by current) and the maximum output swing on the line at high currents is influenced by dc voltage v ln-slpe (limited by voltage). in both these situations, the internal dynamic limiter in the sending channel prevents distortion when the microphone is overdriven. the maximum ac output swing on ln is shown in fig.7; practical values for r16 are from 200 w to 600 w and this influences both maximum output swing at low line currents and the supply capabilities. when the slpe pin is the reference for peripheral circuits, inputs mute, pd and dtmf must be referenced to slpe. this is achieved by connecting pin v ee2 to pin slpe; v ee2 being the reference of mute, pd and dtmf input stages. active microphones can be supplied between v cc and v ee1 as shown in fig.5. low power circuits that provide mute, pd and dtmf inputs to the TEA1064B can also be powered from v cc (see fig.6 for the supply capability of fig.6 maximum current i p with respect to fig.5 available from v cc for peripheral circuitry with v cc > 2.2 v. (a) i p = 1.94 ma (b) i p = 1.54 ma (a ) i p = 0.54 ma (b )i p = 0.16 ma i line =15ma r1 = 620 w and r9 = 20 w curve (a) and (a ) are valid when the receiving amplifier is not driven or when mute = high. curve (b) and (b ) are valid when the receiving amplifier is driven and when mute = low. v o(rms) = 150 mv, r t = 150 w . handbook, halfpage 012 4 2.4 0 0.8 1.6 mba434 3 v cc (v) i p (ma) (a) (b) (a') (b') r va(reg-slpe) = 20 k w without r va(reg-slpe) v cc ). mute, pd and dtmf are then referenced to v ee1 and the pin v ee2 must therefore be connected to v ee1 . if the line current i line exceeds i cc + 0.25 ma, the voltage converter shunts the excess current to slpe via ln; where i cc ? 1.3 ma, the value required by the ic for normal operation. the dc line voltage on ln is: v ln = v ln-slpe + (i slpe x r9) v ln = v ref + ({i line - i cc - 0.25 x 10 - 3 a} x r9) in which: v ref = 3.23 v 0.25 v is the internal reference voltage between ln and slpe; its value can be adjusted by external resistor r va . r9 = external resistor between slpe and v ee1 (20 w in basic operation). with r9 = 20 w , this results in: v ln = 3.3 0.25 v at i line = 15 ma v ln = 4.1 0.3 v at i line = 15 ma, r va(reg-slpe) = 33 k w v ln = 4.4 0.35 v at i line = 15ma, r va(reg- slpe) = 20 k w the preferred value for r9 is 20 w . changing r9 influences microphone gain, dtmf gain, the gain control characteristics, sidetone and the dc characteristics (especially the low voltage characteristics). in normal conditions, i slpe >> (i cc + 0.25 ma) and the static behaviour is equivalent to a voltage regulator diode with an internal resistance of r9. in the audio frequency range the dynamic impedance is determined mainly by r1. the equivalent impedance of the circuit in audio frequency range is shown in fig.8. the internal reference voltage v ln-slpe can be increased by external resistor r va(reg-slpe) connected between reg and slpe. the voltage v ln-slpe is shown as a function of r va(reg-slpe) in fig.9. changing the reference voltage influences the output swing of both sending and receiving amplifiers. at line currents below 8 ma (typ.), the dc voltage dropped across the circuit is adjusted to a lower level automatically (approximately 1.8 v at 2 ma). this gives the possibility of operating more telephone sets in parallel with dc line voltages (excluding polarity guard) down to an absolute minimum of 1.8 v. at line currents below 8 ma (typ.), the circuit has limited sending and receiving levels.
march 1994 9 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B fig.7 typical ac output swing at total harmonic distortion (thd) = 2% on the line as a function of line current with peripheral supply current as a parameter. r16 = 392 w ; i p with respect to fig.3. handbook, halfpage 10 6 4 2 0 20 30 mba437 v ln(p-p) (v) i line (ma) i p = 0 ma 1.4 ma 2.7 ma fig.8 equivalent impedance between ln and v ee . l eq =c3 r9 r p r p =15k w handbook, halfpage mba438 r9 20 w reg ln c3 4.7 m f r p v ref l eq v cc v ee1 c1 r1 fig.9 internal reference voltage v ln-slpe as a function of resistor r va(reg-slpe) for line currents between 11 ma and 140 ma. v ln =v ln-slpe + ({i line - 1.55 10 - 3 a} r9). handbook, full pagewidth 7.8 3.0 080 40 120 mba467 4.2 5.4 6.6 rv va (reg-slpe) (k w ) v ref (v) with r va infinite
march 1994 10 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B microphone inputs mic + and mic - and gain pins gas1 and gas2 the TEA1064B has symmetrical microphone inputs, its input impedance is 64 k w (2 x 32 k w ) and its voltage amplification is typically 52 db with r7 = 68 k w . either dynamic, magnetic or piezo-electric microphones can be used, or an electret microphone with a built-in fet buffer. arrangements for the microphone types are shown in fig.10. the gain of the microphone amplifier is proportional to external resistor r7 connected between gas1 and gas2 and with this it can be adjusted between 44 db and 52 db to suit the sensitivity of the transducer. an external 100 pf capacitor (c6) is required between gas1 and slpe to ensure stability. a larger value of c6 may be chosen to obtain a first-order low-pass filter with a cut-off frequency corresponding to the time constant r7 x c6. fig.10 microphone arrangements (a) magnetic or dynamic microphone (b) electret microphone (c) piezo-electric microphone currents. resistor (1) may be connected to reduce the terminating impedance, or for sensitive types a resistive attenuator can be used to prevent overloading the microphone inputs. handbook, full pagewidth mba439 v ee1 v cc 16 8 9 11 9 8 (1) (a) (b) (c) mic + mic - mic - mic + 9 8 mic - mic +
march 1994 11 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B dynamic limiter (microphone) pin dls/ mmute a low level at the dls/ mmute pin inhibits the microphone inputs mic + and mic - but has no influence on the receiving and dtmf amplifiers. removing the low level at the dls/ mmute pin provides the normal function of the microphone amplifier after a short time determined by the capacitor connected to dls/ mmute pin. the microphone mute function can be realised by a simple switch as shown in fig.11. to prevent distortion of the transmitted signal, the gain of the sending amplifier is reduced rapidly when peaks of the signal on the line exceed an internally-determined threshold. the time in which gain reduction is effected (attack time) is very short. the circuit stays in the gain-reduced condition until the peaks of the sending signal remain below the threshold level. the sending gain then returns to normal after a a time determined by the capacitor connected to dls/ mmute (release time). the internal threshold adapts automatically to the dc voltage setting of the circuit (v ln-slpe ). this means that the maximum output swing on the line will be higher if the dc voltage dropped across the circuit is increased. fig.12 shows the maximum possible output swing on the line as a function of the dc voltage drop (v ln-slpe ) with i line - i p as a parameter. the internal threshold level is lowered automatically if the dc current in the transmit output stage is insufficient. this prevents distortion of the sending signal in applications using parallel-connected telephones or telephones operating over long lines, for example. dynamic limiting also considerably improves sidetone performance in over-drive conditions (less distortion; limited sidetone level). fig.11 microphone-mute function. handbook, halfpage mba440 r17 3.3 k w 7 11 dls/mmute v ee1 fig.12 typical output swing on line as a function of the dc voltage drop v ln-slpe with i line - i p as a parameter. r16 = 392 w . 5.5 10 0 3 3.5 4 4.5 5 2 4 6 8 v ln(p-p) (v) v ln -v slpe (v) i line -i p (ma) mba464 25 23 21 19 17 15 13 11
march 1994 12 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B receiving ampli?er ir, qr + , qr - and gar the receiving amplifier has one input ir and two complimentary outputs, qr + (non-inverting) and qr - (inverting). these outputs may be used for single-ended or differential drive, depending on the type and sensitivity of the earpiece used (see fig.13). gain from ir to qr + is typically 31 db with r4 = 100 k w , sufficient for low-impedance magnetic or dynamic earpieces which are suitable for single-ended drive. by using both outputs (differential drive) the gain is increased by 6 db. differential drive can be used when the earpiece impedance exceeds 450 w as with high-impedance dynamic, magnetic or piezo-electric earpieces. fig.13 alternative receiver arrangements (a) dynamic earpiece with an impedance less than 450 w (b) dynamic earpiece with an impedance more than 450 w (c) magnetic earpiece with an impedance more than 450 w (d) piezo-electric earpiece. resistor (1) may be connected to prevent distortion (inductive load). resistor (2) is required to increase the phase margin (stability with capacitive load). handbook, full pagewidth mba441 (1) qr - qr + 5 4 v ee 11 qr - qr + 5 4 qr - qr + 5 4 (2) qr - qr + 5 4 (a) (b) (c) (d)
march 1994 13 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B the output voltage of the receiving amplifier is specified for continuous-wave drive. fig.14 shows the maximum output swing of the receiving amplifier as a function of the dc voltage drop (v ln ). the maximum output voltage will be higher under speech conditions, where the ratio of the peak to the rms value is higher. the gain of the receiving amplifier can be adjusted to suit the sensitivity of the transducer used. the adjustment range is between 20 db and 39 db with single-ended drive and between 26 db and 45 db with differential drive. the gain is proportional to the external resistor r4 connected between gar and qr + . the overall gain between ln and qr + can be found by subtracting the attenuation of the anti-sidetone network (32 db) from the amplifier gain. two external capacitors (c4 = 100 pf and c7 = 10 x c4 = 1 nf) ensure stability. a larger value may be chosen to obtain a first-order low-pass filter. the cut-off frequency corresponds with time constant r4 x c4. the relationship c7 = 10 x c4 must be maintained. fig.14 typical output swing of the receiving amplifier as a function of dc voltage drop v ln with the load at the receiver output as parameter. valid for both options; thd = 2%, i line =15ma. curve (1) is for a differential load of 47 nf (series resistance = 100 w ; f = 3400 hz. curve (2) is for a differential load of 450 w ; f = 1 khz. curve (3) is for a single-ended load of 150 w ; f = 1 khz. handbook, halfpage 0 34 6 1.5 0.5 1.0 mlb031 5 v ln (v) v qr(rms) (v) (2) (3) (1)
march 1994 14 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B automatic gain control input agc automatic compensation of line loss is obtained by connecting a resistor (r6) between agc and v ee1 . this automatic gain control varies the gain of the microphone amplifier and receiving amplifier in accordance with the dc line current. the control range is 6.1 db; this corresponds to a 5 km line of 0.5 db diameter copper twisted-pair cable (dc resistance = 176 w /km, average attenuation = 1.2 db/km). the dtmf gain is not affected by this feature. the value of r6 must be chosen with reference to the exchange supply voltage and its feeding bridge resistance (see fig.15 and table 1). different values of r6 give the same line current ratios at the start and the end of the control range. if automatic line-loss compensation is not required the agc pin can be left open-circuit, the amplifiers then provide their maximum gain. table 1 values of r6 giving optimum line-loss compensation at various values of exchange supply voltage (v exch ) and exchange feeding bridge resistance (r exch ); r9 = 20 w r exch ( w ) 400 600 800 1000 r6 (k w ) v exch (v) 35 84.5 66.5 x x 48 118 93.1 77.8 66.5 60 x x 97.6 84.5 fig.15 variation of gain as a function of line current with r6 as a parameter; r9 = 20 w . handbook, full pagewidth mlb030 - 6 - 4 - 2 0 d a vd (db) 140 120 100 80 60 40 20 0 r6 = 66.5 k w 93.1 k w 118 k w r6 = i line (ma)
march 1994 15 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B v ee2 input v ee2 is the reference for mute, power-down and dtmf inputs. these signals are referenced to v ee1 when generated by peripherals powered between v cc and v ee1 , but they can also be referenced to slpe when peripherals are powered as shown in fig.3. in the first instance (reference to v ee1 ), v ee2 has to be connected to v ee1 . in the second instance (reference to slpe), v ee2 has to be connected to slpe. mute input (see notes 1 and 2) mute = high enables the dtmf input and inhibits the microphone and receiving amplifier inputs. mute = low or open-circuit disables the dtmf input and enables the microphone and receiving amplifier inputs. switching mute gives negligible clicks at the telephone outputs and on the line. dual-tone multi-frequency input dtmf (see note 1) when the dtmf input is enabled, dialling tones may be sent on the line. the voltage gain between dtmf-v ee2 and ln-v ee1 is typically 26.5 db less than the gain of the microphone amplifier and varies with r7 in the same way as the gain of the microphone amplifier. this means that the tone level at the dtmf input has to be adjusted after setting the gain of the microphone amplifier. with r7 = 68 k w the gain is typically 25.5 db. the signalling tones can be heard in the earpiece at a low level (confidence tone). power-down input pd (see notes 1. and 2. ) during pulse dialling or register recall (timed loop break) the telephone line is interrupted; as a consequence it provides no supply for the transmission circuit connected to v cc or for the peripherals between v ln and slpe. these supply gaps are bridged by the charges in the capacitors c1 and c15. the requirements on these capacitors are eased by an applied high level to the pd input during the time of the loop break. this reduces the internal supply current i cc1 from 1.3 ma (typ.) to 60 m a (typ.) and switches off the voltage regulator to prevent discharge via ln to v cc2 . a high level at pd also internally disconnects the capacitor at reg so that the voltage stabilizer has no switch-on delay after line interruptions. this minimizes the contribution of the ic to the current waveform during pulse dialling or register recall. when the power-down facility is not required, the pd pin can be left open-circuit or connected to v ee2 . sidetone suppression suppression of the transmitted signal in the earpiece is obtained by the anti-sidetone network comprising r1//z line , r2, r3, r8, r9 and z bal (see fig.16). maximum compensation is obtained when the following conditions are fulfilled: (a) r9 x r2 = r1 x (r3 + {r8//z bal }) (b) (z bal /{z bal + r8}) = (z line /{z line + r1}) if fixed values are chosen for r1, r2, r3 and r9, then condition (a) is always fulfilled provided r8//z bal ? << r3 to obtain optimum sidetone suppression, condition (b) has to be fulfilled, resulting in: z bal = (r8/r1) x z line = k x z line where k is a scale factor; k = (r8/r1). the scale factor k (value of r8) is chosen to meet the following criteria: compatibility with a standard capacitor from the e6 or e12 range for z bal z bal //r8 ? << r3 to fulfil condition (a) and thus ensure correct anti-sidetone bridge operation z bal + r8 ? >> r9 to avoid influencing the transmit gain in practise z line varies considerably with the line length and line type. therefore the value chosen for z bal should be for an average line length giving satisfactory sidetone suppression with short and long lines. the suppression also depends on the accuracy of the match between z bal and the impedance of the average line.
march 1994 16 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B e xample the line impedance for which optimum suppression is to be obtained can be represented by 210 w+ (1265 w //140 nf). this represents a 5 km line of 0.5 mm diameter copper twisted-pair cable matched with 600 w (176 w /km; 38 nf/km). with k = 0.64 this results in : r8 = 390 w ; z bal = 130 w+ (820 w //220 nf). the anti-sidetone network for the tea1060 family shown in fig.16 attenuates the signal received from the line by 32 db before it enters the receiving amplifier. the attenuation is almost constant over the whole audio-frequency range. alternatively a conventional wheatstone bridge can be used as an anti-sidetone circuit (see fig.17). both bridge types can be used with either resistive or complex set impedances. (more information on the balancing of anti-sidetone bridges can be obtained in our publication versatile speech transmission ics for electronic telephone sets , order number 9398 341 10011). notes 1. the reference level used for the mute, dtmf and pd inputs is v ee2 . 2. a low level for any of these pins is defined by connection to v ee2 , a high level is defined as a voltage greater than v ee2 + 1.5 v and smaller than v cc + 0.4 v. fig.16 equivalent circuit of tea1060 family anti-sidetone bridge. handbook, full pagewidth mba465 r1 r2 r9 r3 ir r8 v ee2 slpe ln z line r t i m z bal fig.17 equivalent circuit of an anti-sidetone network in the wheatstone bridge configuration. handbook, full pagewidth mba466 r1 r9 ir r8 v ee2 slpe ln z line r t i m r a z bal
march 1994 17 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B limiting values in accordance with the absolute maximum system (iec134). notes 1. mostly dependent on the maximum required t amb and on the voltage between ln and slpe. see figs 18 and 19 to determine the current as a function of the required voltage and the temperature. 2. calculated for the maximum ambient temperature specified t amb = 75 c and a maximum junction temperature of 125 c. thermal resistance note 1. mounted on glass epoxy board 41 19 1.5 mm. symbol parameter conditions min. max. unit v ln positive line voltage continuous - 12 v v ln repetitive line voltage during switch-on line interruption - 13.2 v v ln repetitive peak line voltage one 1 ms pulse per 5 s r9 = 20 w ; r10 = 13 w ; see fig.22 - 28 v i ln line current r9 = 20 w TEA1064B note 1 - 140 ma TEA1064Bt note 1 - 140 ma v i input voltage on pins other than ln v ee1 - 0.7 v cc + 0.7 v p tot total power dissipation r9 = 20 w ; note 2 TEA1064B - 717 mw TEA1064Bt - 555 mw t amb operating ambient temperature - 25 + 75 c t stg storage temperature - 40 + 125 c t j junction temperature -+ 125 c symbol parameter thermal resistance r th j-a from junction to ambient in free air sot146 70 k/w sot163a (note 1) 90 k/w
march 1994 18 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B fig.18 TEA1064B safe operating area. (1) t amb =45 c; p tot = 1143 mw. (2) t amb =55 c; p tot = 1000 mw. (3) t amb =65 c; p tot = 857 mw. (4) t amb =75 c; p tot = 714 mw. handbook, halfpage 212 160 40 80 120 60 100 140 mlb032 46810 v ln -v slpe (v) (2) (3) (4) (1) i ln (ma) fig.19 TEA1064Bt safe operating area. (1) t amb =45 c; p tot = 888 mw. (2) t amb =55 c; p tot = 777 mw. (3) t amb =65 c; p tot = 666 mw. (4) t amb =75 c; p tot = 555 mw. handbook, halfpage 212 150 30 70 110 50 90 130 msa546 46810 v ln -v slpe (v) (2) (3) (4) (1) i ln (ma)
march 1994 19 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B characteristics i line = 11 to 140 ma; v ee1 = 0 v; f = 800 hz; t amb = 25 c; r l = 600 w ; tested in the circuits of fig.20 or fig.21; v ee2 connected to slpe; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies ln and v cc (pins 1 and 16) v ln dc line voltage: voltage drop between ln and v ee1 mic - , mic + inputs open-circuit; without r va i line = 2 ma - 1.8 - v i line = 4 ma - 2.2 - v i line = 7 ma - 3.2 - v i line = 11 ma - 3.4 - v i line = 15 ma 3.25 3.5 3.75 v i line = 100 ma - 5.25 6.05 v i line = 140 ma - 6.1 7.0 v d v ln / d t variation with temperature i line = 15 ma - 3 - 1 + 1 mv/k v ln voltage drop over circuit with r va connected between reg and slpe r va = 33 k w 3.8 4.1 4.4 v r va = 20 k w 4.05 4.4 4.75 v i cc internal supply current into pin 16 v cc = 2.8 v pd = low - 1.3 1.6 ma pd = high - 60 82 m a v cc supply voltage available for peripheral circuitry v ee2 connected to v ee1 i line = 15 ma; mute = high; see fig.5 i p = 0.54 ma 2.2 2.4 - v i p = 0 ma 2.5 2.7 - v v p supply voltage available for peripheral circuitry i line = 15 ma i p = 1.4 ma 2.5 2.7 - v i p = 2.7 ma; r reg-slpe = 20 k w 2.9 3.1 - v microphone inputs mic - and mic + (pins 8 and 9) z i input impedance differential 51 64 77 k w single-ended 25.5 32.0 38.5 k w cmrr common mode rejection ratio - 82 - db g v voltage gain (see fig.20) i line = 15 ma; r7 = 68 k w 51 52 53 db d g v f variation of g v with frequency referred to 0.8 khz f = 300 and 3400 hz - 0.5 0.1 + 0.5 db
march 1994 20 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B d g v t variation of g v with temperature referred to 25 c without r6; i line = 50 ma; t amb = - 25 to + 75 c - 0.2 - db dtmf input (pin 12) z i input impedance 16.8 20.7 24.6 k w g v voltage gain (see fig.20) i line = 15 ma; r7 = 68 k w 24.5 25.5 26.5 db d g v f variation of g v with frequency referred to 0.8 khz f = 300 and 3400 hz - 0.5 0.01 + 0.5 db f = 697 and 1633 hz - 0.2 0.05 + 0.2 db d g v t variation of g v with temperature referred to 25 c i line = 50 ma; t amb = - 25 to + 75 c - 0.2 0.5 db gain adjustment inputs gas1 and gas2 (pins 2 and 3) d g v transmitting ampli?er gain adjustment range - 8 -+ 0db sending ampli?er output ln (pin 1) d ynamic limiter v ln(p-p) output voltage swing (peak-to-peak value) i line = 15 ma; r7 = 68 k w ; v i(rms) = 3.6 mv 3.4 3.8 4.2 v thd total harmonic distortion v i = 3.6 mv + 10 db - 1.5 - % v i = 3.6 mv + 15 db - 2.8 - % v ln(p-p) output voltage swing (peak-to-peak value) v i = 3.6 mv + 10 db i p = 1.4 ma 3.55 3.8 4.05 v i p = 2.7 ma 3.25 3.5 3.75 v i p = 0 ma; i line = 7 ma - 1.8 - v i p = 0 ma; i line = 4 ma - 0.9 - v dynamic behaviour of limiter c16 = 470 nf t att attack time v mic jumps from 2 mv to 40 mv - 1.5 5.0 ms t rel release time v mic jumps from 40 mv to 2 mv 50 150 - ms v no(rms) noise output voltage (rms value) i line = 15 ma; r7 = 68 k w ; 200 w between mic - and mic + ; psophometrically weighted (p53 curve) -- 72 - dbmp symbol parameter conditions min. typ. max. unit
march 1994 21 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B receiving ampli?er input ir (pin 13) z i input impedance 17 21 25 k w receiving ampli?er outputs qr - and qr + (pins 4 and 5) z o output impedance single-ended - 4 -w g v voltage gain (see fig.21) i line = 15 ma; r4 = 100 k w single-ended r t = 300 w 30 31 32 db differential r t = 600 w 36 37 38 db d g v f variation of g v with frequency referred to 0.8 khz f = 300 and 3400 hz - 0.5 - 0.2 0 db d g v t variation of g v with temperature referred to 25 c without r6; i line = 50 ma; t amb = - 25 to + 75 c - 0.2 - db v o(rms) output voltage (rms value) tda = 2%; sinewave drive; r4 = 100 k w ; i line = 15 ma single-ended r t = 150 w- 0.2 - v differential r t = 450 w- 0.37 - v differential c t = 47 nf; r s = 100 w ; f = 3400 hz - 0.52 - v v o(rms) output voltage (rms value) i p = 0 ma; tda = 10%; sinewave drive; r4 = 100 k w ; r t = 150 w i line = 4 ma - 20 - mv i line = 7 ma - 160 - mv v no(rms) noise output voltage (rms value) i line = 15 ma; r4 = 100 k w ; psophometrically weighted (p53 curve); pin ir open-circuit single-ended r t = 300 w- 45 -m v differential r t = 600 w- 90 -m v v no(rms) noise output voltage (rms value) see fig.21; s1 in position 2; 200 w between mic - and mic + ; single-ended; r t = 300 w r7 = 68 k w- 100 -m v r7 = 24.9 k w- 65 -m v symbol parameter conditions min. typ. max. unit
march 1994 22 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B gain adjustment input gar (pin 6) d g v receiving ampli?er gain adjustment range - 11 -+ 8db mute input (pin 14) v ih high level input voltage 1.5 + v ee2 - v cc + 0.4 v v il low level input voltage 0 - 0.3 + v ee2 v i mute input current - 11 20 m a d g v change of microphone ampli?er gain at mute on mute = high -- 100 - db g v voltage gain from input dtmf-slpe to qr + output with mute on mute = high; single-ended load; r l = 300 w -- 18 - db power-down input pd (pin 15) v ih high level input voltage 1.5 + v ee2 - v cc1 + 0.4 v v il low level input voltage 0 - 0.3 + v ee2 v i pd input current - 510 ma automatic gain control input agc (pin 18) controlling the gain from ir (pin 13) to qr + , qr - (pins 4, 5) and the gain from mic + , mic - (pins 8, 9) to ln (pin 1) r6 = 93.1 k w (between pins 18 and 11) g v gain control range with respect to i line =15ma i line =75ma - 5.7 - 6.1 - 6.5 db i line highest line current for maximum gain - 24 - ma i line lowest line current for minimum gain - 61 - ma d g v change of gain between i line = 15 and 35 ma - 0.9 - 1.4 - 1.9 db microphone mute input dls/ mmute (pin 7) v il low level input voltage v ee1 - v ee1 + 0.3 v i il input current at low level input voltage - 85 - 60 - 35 m a t rel release time after a low level on pin 7 c16 = 470 nf - 30 - ms d g v change of microphone ampli?er gain at low level input voltage on pin 7 -- 100 - db symbol parameter conditions min. typ. max. unit
march 1994 23 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... fig.20 test circuit for defining voltage gain of mic - , mic + and dtmf inputs; voltage gain (g v ) is defined as 20log v o /v i ? . for measuring gain from mic + and mic - the mute input should be low or open-circuit. for measuring the dtmf input, the mute input should be high. inputs not being tested should be open-circuit. handbook, full pagewidth mba443 v ee2 v ee1 reg agc stab v cc ln r9 20 w r6 18 17 11 19 dls/mmute pd mute dtmf mic - mic + ir 620 w TEA1064B r4 100 k w r l 600 w i line c4 100 pf c7 1 nf 11 to 140 ma 100 m f 7 c15 220 m f c1 100 m f i p 15 14 12 8 9 13 10 20 r5 3.6 k w c3 4.7 m f c16 470 nf slpe r7 68 k w c6 100 pf 10 m f 392 w r1 r16 qr - qr + gar gas1 gas2 4 16 1 5 6 2 3 v i v i v o
march 1994 24 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... handbook, full pagewidth mba444 v ee2 v ee1 reg agc stab v cc ln r9 20 w 820 w 220 nf r6 18 17 11 19 dls/mmute pd mute dtmf mic - mic + ir s1 620 w TEA1064B r4 100 k w r l 600 w z t v o i line c4 100 pf c7 1 nf 11 to 140 ma 100 m f 7 c15 220 m f c1 100 m f i p 15 14 12 8 9 13 100 nf 2 1 10 20 r5 3.6 k w r5 3.92 k w r8 390 w 130 w c3 4.7 m f c16 470 nf slpe r7 68 k w c6 100 pf 10 m f 130 k w r2 392 w r1 r16 qr - qr + gar gas1 gas2 4 16 1 5 6 2 3 v i fig.21 test circuit for defining voltage gain of the receiving amplifier; voltage gain (g v ) is defined as 20log v o /v i ? (with s1 in position 1).
march 1994 25 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... application information the basic application circuit is shown in fig.22 and a typical application is shown in fig.23. k, full pagewidth mba445 v ee2 v ee1 reg gas2 gas1 100 pf agc stab ln v cc 392 w r16 620 w r1 390 w r8 r5 3.6 k w r9 20 w r4 100 k w 17 3 2 20 dls/mmute gar mic - mic + ir TEA1064B 8 9 6 5 4 13 18 10 r6 r7 68 k w c16 470 nf slpe c6 11 r17 3.3 k w r14 r13 c5 100 nf z bal c3 4.7 m f c15 220 m f c1 100 m f - + c4 100 pf c7 1 nf r3 3.92 k w r2 130 k w r10 13 w bas11 (2 ) bzw14 (2 ) telephone line dtmf mute qr - qr + pd 12 116 14 15 7 19 from dial and control circuits fig.22 basic application of TEA1064B with slpe as supply reference for peripherals, shown here with piezo-electric earpiece and dtmf dialling. the diode bridge and r10 limit the current into, and the voltage across, the circuit during line transients. a different protection arrangement is required for pulse dialling or register recall.
march 1994 26 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B fig.23 typical dtmf-pulse set application circuit (simplified) showing the TEA1064B with the cmos bilingual dialling circuit pcd3310. the broken line indicates optional flash (register recall by timed loop break). handbook, full pagewidth mba446 TEA1064B telephone line cradle contact bsn254a v ee1 v ee2 slpe ln dtmf mute pd pcd3310 v ss v dd m fl dtmf
march 1994 27 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B package outlines unit a max. 1 2 b 1 cd e e m h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot146-1 92-11-17 95-05-24 a min. a max. b z max. w m e e 1 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 6.40 6.22 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.0 4.2 0.51 3.2 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 0.25 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.078 0.17 0.020 0.13 sc603 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 20 1 11 10 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. (1) (1) (1) dip20: plastic dual in-line package; 20 leads (300 mil) sot146-1
march 1994 28 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot163-1 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013ac pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1 95-01-24 97-05-22
march 1994 29 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). dip s oldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. r epairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. so r eflow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. w ave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. r epairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
march 1994 30 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
march 1994 31 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064B notes
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novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 printed in the netherlands 415102/00/02/pp32 date of release: march 1994 document order number: 9397 750 nnnnn

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